MATERIALS AND DEVICE CHARACTERIZATION  FACILITIES

MATERIALS AND DEVICE CHARACTERIZATION  FACILITIES

Equipment

 

Function

 

Automated Dark & Light I-V

For determining solar cell parameters, cell
efficiency, and cell diagnostics

Light and Dark Spectral Response and IQE

For determining IQE, diffusion length and surface
recombination velocity

Reflectivity Measurement

For determining reflectance as a function of
wavelength

PCD and OCVD Lifetime Testers

For determining the minority carrier lifetime as a
function of injection level

DLTS

For detecting traps and determining parameters (ET,
NT, s)
due to impurities and defects.

LBIC

To map defect density, spectral response and
diffusion length in semiconductor materials and devices

EBIC

For determining electrical activity of defects

FTIR

Detection of impurity such as O, B, Al and H in Si
and GaAs.

SIMS

For doping and impurity profiles

Electrical Doping Profiler

For doping concentration profile

Hall Measurements

For carrier mobility, bulk dopant concentration,
conductivity type and dopant energy levels

Photoluminescence

For shallow levels, bandgap, and stress

TEM, SEM, X-ray Topography

For defect and microstructural evaluation

Auger and ESCA

For chemical analysis

C-V, C-t

For interface state density, insulator charges and
generation lifetime in MOS capacitors

Curve Tracer

For analyzing the IV characteristics of Silicon
devices

Four Point Probe

For measuring conductivity type, resistivity, and
sheet residence

I-V-T Tester

For determining carrier transport mechanism defect
centers responsible for leakage current.

Positron Annihilation (PAS)

Defects in Semiconductors

Copyright 2004.